Magnetoresistive Random Access Memory (MRAM) Market Size, Share, and Trends 2024 to 2034

The global magnetoresistive random access memory (MRAM) market size is calculated at USD 5.76 billion in 2025 and is forecasted to reach around USD 84.77 billion by 2034, accelerating at a CAGR of 34.99% from 2025 to 2034. The North America magnetoresistive random access memory (MRAM) market size surpassed USD 2.03 billion in 2024 and is expanding at a CAGR of 35.10% during the forecast period. The market sizing and forecasts are revenue-based (USD Million/Billion), with 2024 as the base year.

  • Last Updated : February 2025
  • Report Code : 3991
  • Category : Semiconductor and Electronic

Chapter 1. Introduction

1.1. Research Objective

1.2. Scope of the Study

1.3. Definition

Chapter 2. Research Methodology (Premium Insights)

2.1. Research Approach

2.2. Data Sources

2.3. Assumptions & Limitations

Chapter 3. Executive Summary

3.1. Market Snapshot

Chapter 4. Market Variables and Scope 

4.1. Introduction

4.2. Market Classification and Scope

4.3. Industry Value Chain Analysis

4.3.1. Raw Material Procurement Analysis 

4.3.2. Sales and Distribution Channel Analysis

4.3.3. Downstream Buyer Analysis

Chapter 5. COVID 19 Impact on Magnetoresistive Random Access Memory (MRAM) Market 

5.1. COVID-19 Landscape: Magnetoresistive Random Access Memory (MRAM) Industry Impact

5.2. COVID 19 - Impact Assessment for the Industry

5.3. COVID 19 Impact: Global Major Government Policy

5.4. Market Trends and Opportunities in the COVID-19 Landscape

6.1. Market Dynamics

6.1.1. Market Drivers

6.1.2. Market Restraints

6.1.3. Market Opportunities

6.2. Porter’s Five Forces Analysis

6.2.1. Bargaining power of suppliers

6.2.2. Bargaining power of buyers

6.2.3. Threat of substitute

6.2.4. Threat of new entrants

6.2.5. Degree of competition

Chapter 7. Competitive Landscape

7.1.1. Company Market Share/Positioning Analysis

7.1.2. Key Strategies Adopted by Players

7.1.3. Vendor Landscape

7.1.3.1. List of Suppliers

7.1.3.2. List of Buyers

Chapter 8. Global Magnetoresistive Random Access Memory (MRAM) Market, By Type

8.1. Magnetoresistive Random Access Memory (MRAM) Market Revenue and Volume, by Type

8.1.1. STT

8.1.1.1. Market Revenue and Volume Forecast

8.1.2. Toggle

8.1.2.1. Market Revenue and Volume Forecast

Chapter 9. Global Magnetoresistive Random Access Memory (MRAM) Market, By Application

9.1. Magnetoresistive Random Access Memory (MRAM) Market Revenue and Volume, by Application

9.1.1. Consumer Electronics

9.1.1.1. Market Revenue and Volume Forecast

9.1.2. Robotics

9.1.2.1. Market Revenue and Volume Forecast

9.1.3. Automotive

9.1.3.1. Market Revenue and Volume Forecast

9.1.4. Enterprise Storage

9.1.4.1. Market Revenue and Volume Forecast

9.1.5. Aerospace & Defense

9.1.5.1. Market Revenue and Volume Forecast

9.1.6. Others

9.1.6.1. Market Revenue and Volume Forecast

Chapter 10. Global Magnetoresistive Random Access Memory (MRAM) Market, Regional Estimates and Trend Forecast

10.1. North America

10.1.1. Market Revenue and Volume Forecast, by Type

10.1.2. Market Revenue and Volume Forecast, by Application

10.1.3. U.S.

10.1.3.1. Market Revenue and Volume Forecast, by Type

10.1.3.2. Market Revenue and Volume Forecast, by Application

10.1.4. Rest of North America

10.1.4.1. Market Revenue and Volume Forecast, by Type

10.1.4.2. Market Revenue and Volume Forecast, by Application

10.2. Europe

10.2.1. Market Revenue and Volume Forecast, by Type

10.2.2. Market Revenue and Volume Forecast, by Application

10.2.3. UK

10.2.3.1. Market Revenue and Volume Forecast, by Type

10.2.3.2. Market Revenue and Volume Forecast, by Application

10.2.4. Germany

10.2.4.1. Market Revenue and Volume Forecast, by Type

10.2.4.2. Market Revenue and Volume Forecast, by Application

10.2.5. France

10.2.5.1. Market Revenue and Volume Forecast, by Type

10.2.5.2. Market Revenue and Volume Forecast, by Application

10.2.6. Rest of Europe

10.2.6.1. Market Revenue and Volume Forecast, by Type

10.2.6.2. Market Revenue and Volume Forecast, by Application

10.3. APAC

10.3.1. Market Revenue and Volume Forecast, by Type

10.3.2. Market Revenue and Volume Forecast, by Application

10.3.3. India

10.3.3.1. Market Revenue and Volume Forecast, by Type

10.3.3.2. Market Revenue and Volume Forecast, by Application

10.3.4. China

10.3.4.1. Market Revenue and Volume Forecast, by Type

10.3.4.2. Market Revenue and Volume Forecast, by Application

10.3.5. Japan

10.3.5.1. Market Revenue and Volume Forecast, by Type

10.3.5.2. Market Revenue and Volume Forecast, by Application

10.3.6. Rest of APAC

10.3.6.1. Market Revenue and Volume Forecast, by Type

10.3.6.2. Market Revenue and Volume Forecast, by Application

10.4. MEA

10.4.1. Market Revenue and Volume Forecast, by Type

10.4.2. Market Revenue and Volume Forecast, by Application

10.4.3. GCC

10.4.3.1. Market Revenue and Volume Forecast, by Type

10.4.3.2. Market Revenue and Volume Forecast, by Application

10.4.4. North Africa

10.4.4.1. Market Revenue and Volume Forecast, by Type

10.4.4.2. Market Revenue and Volume Forecast, by Application

10.4.5. South Africa

10.4.5.1. Market Revenue and Volume Forecast, by Type

10.4.5.2. Market Revenue and Volume Forecast, by Application

10.4.6. Rest of MEA

10.4.6.1. Market Revenue and Volume Forecast, by Type

10.4.6.2. Market Revenue and Volume Forecast, by Application

10.5. Latin America

10.5.1. Market Revenue and Volume Forecast, by Type

10.5.2. Market Revenue and Volume Forecast, by Application

10.5.3. Brazil

10.5.3.1. Market Revenue and Volume Forecast, by Type

10.5.3.2. Market Revenue and Volume Forecast, by Application

10.5.4. Rest of LATAM

10.5.4.1. Market Revenue and Volume Forecast, by Type

10.5.4.2. Market Revenue and Volume Forecast, by Application

Chapter 11. Company Profiles

11.1. Everspin Technologies Inc. (United States)

11.1.1. Company Overview

11.1.2. Product Offerings

11.1.3. Financial Performance

11.1.4. Recent Initiatives

11.2. Samsung Electronics Co., Ltd. (South Korea)

11.2.1. Company Overview

11.2.2. Product Offerings

11.2.3. Financial Performance

11.2.4. Recent Initiatives

11.3. Spin Memory, Inc. (United States)

11.3.1. Company Overview

11.3.2. Product Offerings

11.3.3. Financial Performance

11.3.4. Recent Initiatives

11.4. Avalanche Technology, Inc. (United States)

11.4.1. Company Overview

11.4.2. Product Offerings

11.4.3. Financial Performance

11.4.4. Recent Initiatives

11.5. NVE Corporation (United States)

11.5.1. Company Overview

11.5.2. Product Offerings

11.5.3. Financial Performance

11.5.4. Recent Initiatives

11.6. Crossbar, Inc. (United States)

11.6.1. Company Overview

11.6.2. Product Offerings

11.6.3. Financial Performance

11.6.4. Recent Initiatives

11.7. Intel Corporation (United States)

11.7.1. Company Overview

11.7.2. Product Offerings

11.7.3. Financial Performance

11.7.4. Recent Initiatives

11.8. Honeywell International Inc. (United States)

11.8.1. Company Overview

11.8.2. Product Offerings

11.8.3. Financial Performance

11.8.4. Recent Initiatives

11.9. Crocus Technology (United States)

11.9.1. Company Overview

11.9.2. Product Offerings

11.9.3. Financial Performance

11.9.4. Recent Initiatives

11.10. Toshiba Corporation (Japan)

11.10.1. Company Overview

11.10.2. Product Offerings

11.10.3. Financial Performance

11.10.4. Recent Initiatives

Chapter 12. Research Methodology

12.1. Primary Research

12.2. Secondary Research

12.3. Assumptions

Chapter 13. Appendix

13.1. About Us

13.2. Glossary of Terms

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Frequently Asked Questions

The global magnetoresistive random access memory (MRAM) market size is expected to increase USD 84.77 billion by 2034 from USD 4.22 billion in 2024.

The global magnetoresistive random access memory (MRAM) market will register growth rate of 34.99% between 2025 and 2034.

The major players operating in the magnetoresistive random access memory (MRAM) market are Everspin Technologies Inc., Samsung Electronics Co., Ltd., Spin Memory, Inc., Avalanche Technology, Inc., NVE Corporation, Crossbar, Inc., Intel Corporation, Honeywell International Inc., Crocus Technology, Toshiba Corporation, SK Hynix Inc., IBM Corporation, Fujitsu Ltd., Crocus Nano Electronics LLC, Avalanche Computing, Inc., and Others.

The driving factors of the magnetoresistive random access memory (MRAM) market are the increasing demand for electronic devices & wearables and the demand for non-volatile memory solutions.

North America region will lead the global magnetoresistive random access memory (MRAM) market during the forecast period 2025 to 2034.

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